Diodes Incorporated DMN2011UFDE-7
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| Attribute | Value |
|---|---|
| Mfr | Diodes Incorporated |
| Grade | - |
| Series | - |
| FET Type | N-Channel |
| Packaging | Tape & Reel (TR); Cut Tape (CT) |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 6-PowerUDFN |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Base Product Number | DMN2011 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 7A, 4.5V |
| Power Dissipation (Max) | 610mW (Ta) |
| Supplier Device Package | U-DFN2020-6 (Type E) |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2248 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Ta) |
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Packaging Process
