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Central Semiconductor Corp CDM22012-800LRFP SL PBFREE

Central Semiconductor Corp CDM22012-800LRFP SL PBFREE electronic component product image

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Manufacturer No
CDM22012-800LRFP SL PBFREE
Package
TO-220FP
Packaging
Sleeve
Description
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Sleeve
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
EA
Tab
Tab
PPAP
No
EU RoHS
Supplier Unconfirmed
Category
Power MOSFET
Mounting
Through Hole
ECCN (US)
EAR99
Packaging
Sleeve
Pin Count
3
Automotive
No
Lead Shape
Through Hole
PCB changed
3
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
5.12(Max)
Package Height
16.25(Max)
Package Length
10.63(Max)
Supplier Package
TO-220FP
Maximum IDSS (uA)
1
Standard Package Name
TO
Typical Fall Time (ns)
42.5
Typical Rise Time (ns)
44.8
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
40000
Typical Gate Charge @ 10V (nC)
52.4
Typical Gate Charge @ Vgs (nC)
52.4@10V
Maximum Gate-Source Voltage (V)
30
Typical Turn-On Delay Time (ns)
21.1
Maximum Drain-Source Voltage (V)
800
Typical Turn-Off Delay Time (ns)
171.2
Maximum Gate Threshold Voltage (V)
4
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
12
Typical Input Capacitance @ Vds (pF)
1090@100V
Maximum Drain-Source Resistance (mOhm)
450@10V
Maximum Gate-Source Leakage Current (nA)
100
AttributeValue
HTSEA
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
CategoryPower MOSFET
MountingThrough Hole
ECCN (US)EAR99
PackagingSleeve
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
AvailabilityNo Stock Available
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.12(Max)
Package Height16.25(Max)
Package Length10.63(Max)
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Standard Package NameTO
Typical Fall Time (ns)42.5
Typical Rise Time (ns)44.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)52.4
Typical Gate Charge @ Vgs (nC)52.4@10V
Maximum Gate-Source Voltage (V)30
Typical Turn-On Delay Time (ns)21.1
Maximum Drain-Source Voltage (V)800
Typical Turn-Off Delay Time (ns)171.2
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1090@100V
Maximum Drain-Source Resistance (mOhm)450@10V
Maximum Gate-Source Leakage Current (nA)100

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