10-13 NOV 2026 · Munich, Germany

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Central Semiconductor Corp 2N5486 PBFREE

Central Semiconductor Corp 2N5486 PBFREE electronic component product image

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Manufacturer No
2N5486 PBFREE
Package
TO-92
Description
Trans RF MOSFET N-CH 25V 0.03A 3-Pin TO-92
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.21.00.95
PPAP
No
Type
JFET
EU RoHS
Compliant
Material
Si
Mounting
Through Hole
ECCN (US)
EAR99
Pin Count
3
Automotive
No
PCB changed
3
Availability
No Stock Available
Channel Type
N
Configuration
Single
Package Width
3.69
Package Height
4.83
Package Length
4.83
Supplier Package
TO-92
Maximum IDSS (uA)
20000
Standard Package Name
TO
Manufacturer Lead Time
2 weeks
Typical Power Gain (dB)
30(Max)
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
310
Maximum Gate-Source Voltage (V)
25
Maximum Drain-Source Voltage (V)
25
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-65
Maximum Continuous Drain Current (A)
0.03
Typical Input Capacitance @ Vds (pF)
5@15V
Typical Output Capacitance @ Vds (pF)
2@15V
Maximum Gate-Source Leakage Current (nA)
200
Typical Reverse Transfer Capacitance @ Vds (pF)
1@15V
AttributeValue
HTS8541.21.00.95
PPAPNo
TypeJFET
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
AvailabilityNo Stock Available
Channel TypeN
ConfigurationSingle
Package Width3.69
Package Height4.83
Package Length4.83
Supplier PackageTO-92
Maximum IDSS (uA)20000
Standard Package NameTO
Manufacturer Lead Time2 weeks
Typical Power Gain (dB)30(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)310
Maximum Gate-Source Voltage (V)25
Maximum Drain-Source Voltage (V)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)5@15V
Typical Output Capacitance @ Vds (pF)2@15V
Maximum Gate-Source Leakage Current (nA)200
Typical Reverse Transfer Capacitance @ Vds (pF)1@15V

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