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Central Semiconductor Corp 2N5416

Central Semiconductor Corp 2N5416 electronic component product image

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Manufacturer No
2N5416
Date Code
0701
Quantity
94
Availability
In Stock
Package
TO-39
Packaging
Box
Description
Trans GP BJT PNP 300V 1A 1000mW 3-Pin TO-39 Box
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
Type
PNP
EU RoHS
Supplier Unconfirmed
Category
Bipolar Power
Diameter
9.4(Max)
Material
Si
Mounting
Through Hole
ECCN (US)
EAR99
Packaging
Box
Pin Count
3
Automotive
No
Lead Shape
Through Hole
PCB changed
3
Availability
No Stock Available
Configuration
Single
Package Height
6.6(Max)
Supplier Package
TO-39
Standard Package Name
TO
Manufacturer Lead Time
8 weeks
Minimum DC Current Gain
30@50mA@10V
Maximum Base Current (A)
0.5
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1000
Maximum Base-Emitter Voltage (V)
6
Maximum DC Collector Current (A)
1
Maximum Collector-Base Voltage (V)
350
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Operating Junction Temperature (°C)
-65 to 200
Maximum Collector-Emitter Voltage (V)
300
Maximum Collector Cut-Off Current (nA)
50000
Maximum Base-Emitter Saturation Voltage (V)
1.5@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)
2@5mA@50mA
AttributeValue
HTS8541.29.00.55
PPAPNo
TypePNP
EU RoHSSupplier Unconfirmed
CategoryBipolar Power
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
AvailabilityNo Stock Available
ConfigurationSingle
Package Height6.6(Max)
Supplier PackageTO-39
Standard Package NameTO
Manufacturer Lead Time8 weeks
Minimum DC Current Gain30@50mA@10V
Maximum Base Current (A)0.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Base-Emitter Voltage (V)6
Maximum DC Collector Current (A)1
Maximum Collector-Base Voltage (V)350
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)50000
Maximum Base-Emitter Saturation Voltage (V)1.5@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)2@5mA@50mA

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Packaging Process