Cambridge GaN Devices CGD65C025SP2

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Manufacturer

Cambridge GaN Devices

Manufacturer No

CGD65C025SP2

Packaging

Tape & Reel (TR); Cut Tape (CT)

Description

650V GAN HEMT, 25 MOHM, 60A, BHD

Detailed Description

N-Channel 650 V 60A Surface Mount, Wettable Flank BHDFN-9-1

Datasheet

CGD65C025SP2

Payment

Delivery

Mfr

Cambridge GaN Devices

Series

P2

FET Type

N-Channel

Packaging

Tape & Reel (TR); Cut Tape (CT)

Technology

GaNFET (Gallium Nitride)

Mounting Type

Surface Mount, Wettable Flank

Vgs(th) (Max) @ Id

4.2V @ 22mA

Rds On (Max) @ Id, Vgs

35mOhm @ 20A, 15V

Supplier Device Package

BHDFN-9-1

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

60A

Attribute	Value
Mfr	Cambridge GaN Devices
Series	P2
FET Type	N-Channel
Packaging	Tape & Reel (TR); Cut Tape (CT)
Technology	GaNFET (Gallium Nitride)
Mounting Type	Surface Mount, Wettable Flank
Vgs(th) (Max) @ Id	4.2V @ 22mA
Rds On (Max) @ Id, Vgs	35mOhm @ 20A, 15V
Supplier Device Package	BHDFN-9-1
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	60A

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Packaging Process